Features

• automatic component type identification
• automatic pinout identification
• special feature identification such as protection diodes and resistor shunts
• bipolar transistors: gain and leakage current measurements, silicon and germanium detection
• gate threshold measurement for Enhancement Mode MOSFETs
• semiconductor forward voltage measurement for diodes, LEDs and
  transistor Base-Emitter junctions
• automatic and manual power-off

Specifications

• Specification Summary at 20°C (68°F) unless otherwise specified
• peak test current into short circuit: -5.5 mA to 5.5 mA
• peak test voltage across open circuit: -5.1 V to 5.1 V
• transistor:
  • gain range (Hfe): 4 - 65 000
  • gain accuracy: ± 3% ± 5 Hfe
  • Vceo test voltage: 2.0 V - 3.0 V
  • Vbe accuracy: -2% -20 mV to +2% + 20 mV
  • VBE for Darlington (shunted): 0.95 V - 1.80 V (0.75 V - 1.80 V)
  • base-emitter shunt threshold: 50 kΩ - 70 kΩ
  • BJT collector test current: 2.45 mA - 2.55 mA
  • BJT acceptable leakage: 0.7 mA
  • MOSFET:
    • gate threshold range: 0.1 V - 5.0 V
    • threshold accuracy: -2% -20 mV to +2% +20 mV
    • drain test current: 2.45 mA - 255 mA
    • gate resistance: 8 kΩ
  • depletion drain test current: 4.5 mA
  • JFET drain-source test current: 0.5 mA - 5.5 mA